Author/Authors :
Lades، نويسنده , , M and Berz، نويسنده , , D and Schmid، نويسنده , , U and Sheppard، نويسنده , , S.T and Kaminski، نويسنده , , N and Wondrak، نويسنده , , W and Wachutka، نويسنده , , G، نويسنده ,
Abstract :
A detailed numerical analysis of implanted top-gate 6H–SiC JFET structures was performed revealing the influence of a non-uniform channel doping profile. Based on structural parameters extracted from simulations of the device characteristics at various bias conditions and temperatures, we obtain channel mobility parameters close to Hall data for bulk epitaxial layers.
Keywords :
Reverse modeling , JFET , Simulation , High-temperature , SiC
