Title of article
Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition
Author/Authors
Namavar، نويسنده , , F and Colter، نويسنده , , P.C and Planes، نويسنده , , N and Fraisse، نويسنده , , B and Pernot، نويسنده , , J and Juillaguet، نويسنده , , S and Camassel، نويسنده , , J، نويسنده ,
Pages
5
From page
571
To page
575
Abstract
Investigation of porous silicon as a new compliant substrate for hetero-epitaxial deposition of 3C-SiC on silicon has been performed. The resulting layer has been analyzed in terms of X-ray diffraction, infrared reflectivity, micro-Raman scattering and low temperature photoluminescence experiments. From the results, intermediate properties between 3C-SiC deposited on bulk silicon and 3C-SiC deposited on SIMOX have been found.
Keywords
Porous silicon , New compliant substrate , 3C-SiC deposition
Journal title
Astroparticle Physics
Record number
2067577
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