Heteroepitaxial growth of 3C–SiC using HMDS by atmospheric CVD

Single crystal cubic silicon carbide (3C–SiC) films have been deposited on carbonized Si(100) substrate using HMDS{Si2(CH3)6} by atmospheric CVD at 1350°C. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The growth rate of the 3C–SiC films was 4.3 μm h−1. The HMDS flow rate was important to get a mirror-like surface. The 3C–SiC epilayers on Si(100) were characterized by XRD, Raman scattering, and PL measurement as well as AFM. The 3C–SiC distinct phonons of TO(Γ) near 796 cm−1 and LO(Γ) near 973±l cm−1 were recorded by Raman scattering measurement. The PL spectra of CVD 3C–SiC/Si at 11 K from 3.6 to 9.1 μm included the nitrogen-bound excitor (N-BE) lines, the defect-related W band near 2.15 and 2.13 eV peak corresponding to D–A pair recombination as well as the divacancy-related D1 line at 1.97 eV. The results indicated that the crystallinity of the 3C–SiC films became better with increase of the film thickness.