Optimization of the writing and erasing characteristics of MO tri-layered films using the non-magnetic intermediate layer

Exchange coupling of tri-layered films using the non-magnetic intermediate layer had been studied. Based on the magnetization reversal mechanisms of exchange coupled double-layered (ECDL) films, the exchange coupling energy was calculated. Temperature dependence of the exchange coupling energy was discussed. Furthermore, influence of the thickness of the intermediate AlN layer on the exchange coupling energy was studied in detail. The results showed that the exchange coupling energy could be adjusted by variation of the thickness of the AlN layer. Finally, the writing and erasing characteristics of TbFeCo/AlN/DyFeCo films has been proposed.