Author/Authors :
Dyachenko، نويسنده , , O.A. and Gritsenko، نويسنده , , V.V. and Shilov، نويسنده , , G.V. and Karpova، نويسنده , , N.P. and Lyubovskaya، نويسنده , , R.N.، نويسنده ,
Abstract :
X-ray study of the cation-radical salts (ET)8[Hg4Br12·(PhCl)2] (metal up to 90 K) and (ET)8[Hg4Br12·(MePhCl)2] (semiconductor) preparated in the same synthesis has shown considerable differences in the structures of their cationic and anionic layers. It is these differences that account for different electrophysical properties of these compounds.
