Structural and electrical characteristics of copper indium disulfide thin film

The polycrystalline CuInS2 thin films with chalcopyrite structure were prepared by heat treatment at vacuum of S/In/Cu stacked layers, which were deposited by sequential electron beam evaporation (EBE). N - type CuInS2 was appeared on In - riched film, its minimum resistivity was about 80 [Ωcm]. P - type CuInS2 was made of Cu - riched film which was heated under extra S supply, its minimum resistivity was about 5.6 × 10−2 [Ωcm].