Thin film organic channel field effect transistor

Accumulation Field effect transistors based on undoped, conducting Langmuir-Blodgett films have been successfully made. They exhibit reasonably high field induced drain current modulation. In the voltage range explored, the onset of drain current saturation is observed. A model accounting for the electrical behaviour of these FETʹs is presented, which gives access to several material characteristics impossible to obtain by direct measurements on the conducting LB films.