Title of article
Diffusion of electron in LB films with metal-insulator-metal structures
Author/Authors
Kwon، نويسنده , , Young-Soo and Kang، نويسنده , , Dou-Yol and Hino، نويسنده , , Taro، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1995
Pages
2
From page
2033
To page
2034
Abstract
Diffusion of electron in polyimide LB Films of Al / polyimide LB films / Au (MIM) structures is reported in the present paper. Time dependences of the generated voltage in this MIM structures was proportional to the square root of time. Such a relation could be explained by the diffusion of electron from the Au electrode to the Al electrode through polyimide LB films. According to the experiments, diffusion constant of electron was about 2.5×10−17 (cm2/sec). Furthermore, the diffusion current calculated by the diffusion constant coincided with the current measured in the experiments. It is considered that the diffusion of electron is one of the main causes of the voltage generation in the MIM structures of polyimide LB films.
Journal title
Synthetic Metals
Serial Year
1995
Journal title
Synthetic Metals
Record number
2069667
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