Electrical properties and band structure of the transition metal dichalcogenide MoTe2-x doped with bromine

Electrical conductivity and thermoelectric power measurements have been performed on MoTe2-x-single crystals doped with bromine in a wide temperature range (125–770 K). The semiconductor is compensated and the random potential due to the charged lacunar sites and bromine impurities induces a broadening of the bromine level into a narrow band. This band contributes to the conduction in the form of thermally activated hopping.