XPS characterization of polyaniline filled n+-type porous silicon

The n+-type porous Si (PS) - polyaniline (PAn) heterojunction, made by chemical bath deposition of several PAn layers inside the Si pores, is characterized by XPS depth profiling analysis. The PS columns are sheathed by 2 PAn layers and the Si pores are totally filled with 5 PAn layers. Seen by XPS, the PAn polymerized inside the Si pores is not different from the PAn polymerized on the PS. The PS is partially oxidized to SiO2 and Si2O3.