Author/Authors :
Ohnuki، نويسنده , , H. and Kitamura، نويسنده , , K. and Izumi، نويسنده , , M. and Yamauchi، نويسنده , , H. and Kato، نويسنده , , R.، نويسنده ,
Abstract :
An approach is described for the investigation of the physical properties on the conducting Langmuir-Blodgett (LB) film, in which single crystals having the identical structure with the LB film were prepared. The single crystals of [EDT-TTF(SC18)2]2I3 were obtained by electrochemical oxidation and its structure and electrical resistivity were studied. The unit cell parameters are; orthorhombic, a=10.5, b=5.4 and c=45إ. These values are in good agreement with those of packing model. It indicates that the lateral packing of alkyl chains is of critical importance for the unit cell formation. The possible stacking manners of EDT-TTF part are also discussed. The temperature dependence of the electrical resistivity shows semiconducting behavior below room temperature. The metal-insulator transition is also observed at 310 K.