Author/Authors :
Woo، نويسنده , , H.S and Lee، نويسنده , , J.G. and Min، نويسنده , , H.K and Oh، نويسنده , , E.J. and Park، نويسنده , , S.J. and Lee، نويسنده , , Kelvin K.W. and Lee، نويسنده , , J.H. and Cho، نويسنده , , S.H and Kim، نويسنده , , T.W. and Park، نويسنده , , C.H.، نويسنده ,
Abstract :
Light emitting diode(LED) have been constructed using a kind of p-phenylene vinylene oligomer, 1,4 -distyrylbenzene with absorption edge at 3.0 eV. This device consists of 1,4 - distyrylbenzene sandwiched between In and indium-tin oxide (ITO) contacts. In order to increase the electron injection into the emissive material, we have tried to insert thin Sr layer between In and oligomer, giving In/Sr/oligomer/ITO structure. I-V characteristics for devices with and without Sr layer show the noticeable difference in rectifying voltage, lowering down to 5 V with using Sr as an electron injection layer. For the device with Sr layer the current at 5 V is about 100 times higher than the device without Sr layer. In the dark illumination condition, our device shows visible blue-violet emission at room temperature after applying a bias exceeding 5 V.
