Preparation and electronic properties of Schottky devices utilizing an asymmetrically substituted metal-free phthalocyanine Langmuir-Blodgett film as barrier layers

Langmuir-Blodgett films of an asymmetrically substituted phthalocyanine, nitro-tri-t-butylphthalocyanine (NtBuPc) were fabricated with a Z-type deposition model. An Al/NtBuPc L-B film/ITO cell was prepared and its electronic properties were investigated. The cell showed a rectifying effect with a rectification ratio of 10 at ± 2.0 V. The ideality factors were 1.3 in the low voltage region and 3.1 in the high voltage region. respectively. The origin of the rectifying properties for such a cell is discussed.