Electronic characterisation of oligomeric materials for thin film transistor applications

Thin film transistors (TFTs) have been fabricated with active layers formed from a range of oligomeric materials. Characterisation of the devices indicate that the oligomers exhibit field effect mobilities in the range 10−7 to 10−5 cm2V−1s−1. The devices exhibit threshold voltages between 0 and 2 volts and an on / off current ratio of between 10 and 100.