Title of article :
Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon
Author/Authors :
Shin، نويسنده , , D.H. and Lee، نويسنده , , S.D. and Lee، نويسنده , , K.P. and Park، نويسنده , , S.Y. and Choi، نويسنده , , D.H. and Kim، نويسنده , , N.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1995
Pages :
2
From page :
2263
To page :
2264
Abstract :
Thin semiconducting film of 10−9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.
Journal title :
Synthetic Metals
Serial Year :
1995
Journal title :
Synthetic Metals
Record number :
2069767
Link To Document :
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