Title of article
Characteristics of heterojunction consisting of plasma polymerized thiophene and n-type silicon
Author/Authors
Shin، نويسنده , , D.H. and Lee، نويسنده , , S.D. and Lee، نويسنده , , K.P. and Park، نويسنده , , S.Y. and Choi، نويسنده , , D.H. and Kim، نويسنده , , N.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1995
Pages
2
From page
2263
To page
2264
Abstract
Thin semiconducting film of 10−9 S/cm conductivity was prepared by the plasma polymerization of thiophene. A novel heterojunction device was fabricated by the direct plasma polymerization coating of this polymer layer on n-Si, which showed good rectifying and photoconducting behavior at room temperature.
Journal title
Synthetic Metals
Serial Year
1995
Journal title
Synthetic Metals
Record number
2069767
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