Electrical properties of the iodine doped MPc/n-silicon heterojunction

The current-voltage and capacitance-voltage characteristics of the iodine doped MPc on n-Si were measured. MPc was thermally evaporated on Si substrates and doped with iodine via gas phase doping. For I-V measurements, the conventional rectifying properties were shown. Using the one sided abrupt junction model in C-V measurements, we can obtain the density of states at the heterointerface around 1013/cm3.