Title of article
Improved preparation of polybenzo[c]thiophene-modified electrodes employing p-toluenesulfonate as dopant anion
Author/Authors
Higgins، نويسنده , , S.J. Watson-Jones، نويسنده , , C. and King، نويسنده , , G. and Slack، نويسنده , , K.H.D. and Pétidy، نويسنده , , S.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1996
Pages
5
From page
155
To page
159
Abstract
Use of tetraethylammonium p-toluenesulfonate (TEATos) as electrolyte for electrodeposition of polybenzo[c]thiophene from CH3CN solution gives compact, smooth films on indium-doped tin oxide electrodes. These grow at lower overpotentials, and with fewer problems of film inhomogeneity, than films grown using tetrafluoroborate electrolytes. Films up to 10 μm thick have been deposited with TEATos, but film growth is self-limiting with tetraethylammonium tetrafluoroborate (TEAT). TEATos-grown films have a different morphology, but can still be reversibly p-doped in the same way as TEAT-grown films. n-Doping, however, is not electrochemically improved by using TEATos as growth electrolyte.
Keywords
Polyisothianaphthalene , Cyclic voltammetry , Doping , Polythiophene
Journal title
Synthetic Metals
Serial Year
1996
Journal title
Synthetic Metals
Record number
2070137
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