Electrical and photovoltaic effects in organic p-n junction solar cell using furfural resin (FR) and thiazole yellow (TY)

The electrical and photovoltaic properties of an organic p-n heterojunction were investigated by measuring current-voltage (J-V) and capacitance-voltage (C-V) characteristics at various temperatures. The device consists of an indium-tin oxide/furfural resin (p-type)/ thiazole yellow (n-type) /In (abbreviated ITO/FR (p-type) /TY (n-type) /In) structure. The J-V characteristics reveal that the diode quality factor is about 1.97 which is greater than unity. The C-V characteristics indicate that a depletion layer of about 297 nm exists at the FR/TY interface. From the analysis of the photoaction spectra of the device and optical absorption of the FR/TY layer, it was concluded that the photoactive layer is formed at the FR/TY interface and both ITO and In form the ohmic contact. The power conversion efficiency is about 1,25%, which is greater than that of a Schottky barrier based on FR and TY. The charge transport mechanism in the dark and under illumination has been investigated by detailed analysis of the photoaction spectra, rectification and capacitance measurements.