Title of article :
Synthesis and properties of n-type doped semiconducting materials
Author/Authors :
Chmil، نويسنده , , K.H. and de Leeuw، نويسنده , , D.M. and Simenon، نويسنده , , M.M.J. and Tol، نويسنده , , A.J.W.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1997
Pages :
2
From page :
387
To page :
388
Abstract :
The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about −0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.
Keywords :
heterocycle synthesis , Electrochemical methods , local density approximations
Journal title :
Synthetic Metals
Serial Year :
1997
Journal title :
Synthetic Metals
Record number :
2070564
Link To Document :
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