Title of article
Photovoltaic effect of heterojunctions between poly(4,4′-dipentoxy-2,2′-bithiophene) and n-doped silicon
Author/Authors
Camaioni، نويسنده , , N. and Beggiato، نويسنده , , G. and Casalbore-Miceli، نويسنده , , G. and Gallazzi، نويسنده , , M.C. and Geri، نويسنده , , A. and Martelli، نويسنده , , A.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1369
To page
1370
Abstract
The photovoltaic effect of poly(4,4′-dipentoxy-2,2′-bithiophene) (poly(ET2)) conducting polymer deposited on n-doped silicon has been investigated. The plots of short-circuit current, open-circuit voltage, fill factor and conversion efficiency as a function of incident light intensity are reported. Analysis of the photovoltaic characteristics suggests that an internal series resistance limits the junction performance.
Keywords
electrochemical polymerization , Heterojunctions
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2070973
Link To Document