Field-effect transistor studies of precursor-pentacene thin films
Author/Authors :
Jarrett، نويسنده , , C.P. and Brown، نويسنده , , A.R. and Friend، نويسنده , , R.H. and Harrison، نويسنده , , M.G. and de Leeuw، نويسنده , , D.M. and Herwig، نويسنده , , P. and Müllen، نويسنده , , K.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1997
Pages :
2
From page :
1403
To page :
1404
Abstract :
Precursor-route pentacene thin film transistor characteristics are presented. The device temperature dependance is reported and the results discussed in terms of a distribution of mobilities. Voltage modulation spectroscopy is also reported and features discussed.
