Title of article
Field-effect transistor studies of precursor-pentacene thin films
Author/Authors
Jarrett، نويسنده , , C.P. and Brown، نويسنده , , A.R. and Friend، نويسنده , , R.H. and Harrison، نويسنده , , M.G. and de Leeuw، نويسنده , , D.M. and Herwig، نويسنده , , P. and Müllen، نويسنده , , K.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1403
To page
1404
Abstract
Precursor-route pentacene thin film transistor characteristics are presented. The device temperature dependance is reported and the results discussed in terms of a distribution of mobilities. Voltage modulation spectroscopy is also reported and features discussed.
Keywords
Metal-oxide-semiconductor (MOS) structures
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2070990
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