High-resolution electron beam lithography of PMMA derivatives with Langmuir-Blodgett films

We report the result of electron beam lithography using Cambridge EBMF 10.5 system on silicon coated with poly(methylphenyl methacrylate) as electron beam resist. New resists poly(methylphenyl methacrylate) and poly(methylphenyl methacylate)-co-(methyl methacrylate) have been synthesized and their performance as electron beam resists assessed, initially as spin-coated films and then as Langmuir-BIodgett(LB) films on silicon. In this report, the effects of PEB(post expose baking) temperature, exposed dose and developer have been investigated. Preliminary electron beam lithography shows that poly(rnethylphenyl methacrylate) resist is capable of 100 nm resolution and 250 μC/cm2 sensitivity.