Title of article :
Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices
Author/Authors :
de Leeuw، نويسنده , , D.M. and Simenon، نويسنده , , M.M.J. and Brown، نويسنده , , A.R. and Einerhand، نويسنده , , R.E.F.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1997
Pages :
7
From page :
53
To page :
59
Abstract :
Present polymeric microelectronic devices are typically unipolar devices, based on p-type semiconducting polymers. Bipolar devices stable under ambient conditions are desirable, but have not yet been reported due to a lack of stable n-type doped conducting polymers. Starting from the standard redox potentials of, especially, water and oxygen, stability requirements on electrode potentials of n-type doped conducting polymers are derived. The predictions are then compared with experimental data on stability of conducting polymers. A good agreement is obtained. An electrode potential of about 0 to + 0.5 V (SCE) is required for stable n-type doped polymers, similar to the requirement on the electrode potential for stable undoped p-type polymers. Consequences for bipolar devices are analysed. Huge overpotentials for the redox reaction with wet oxygen are required in order to realize thermodynamically stable bipolar devices from known doped p-type and n-type conducting polymers. Finally, possible solutions, accepting thermodynamic instability, are discussed.
Keywords :
stability , Doping , microelectronic devices
Journal title :
Synthetic Metals
Serial Year :
1997
Journal title :
Synthetic Metals
Record number :
2071448
Link To Document :
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