Author/Authors :
Liang، نويسنده , , Chunjun and Li، نويسنده , , Wenlian and Hong، نويسنده , , Ziruo and Liu، نويسنده , , Xingyuan and Peng، نويسنده , , Junbiao and Liu، نويسنده , , Lin and Liu، نويسنده , , Zhibin and Yu، نويسنده , , Jiaqi and Zhao، نويسنده , , Dongxu and Lee، نويسنده , , Shuit-Tong Lee، نويسنده ,
Abstract :
By inserting a thin Gd(AcA) 3phen layer in the electroluminescent devices ITO/Alq/Al and ITO/TPD/Eu(DBM) 3phen/Alq/Al, the quantum efficiency is increased in both devices and the emission color of the second device is changed. These results are supposed to be due to the carrier-blocking effect of the thin Gd(AcA) 3phen layer which changes the distribution of electrons and holes in the devices.
