Title of article
Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer
Author/Authors
Liang، نويسنده , , Chunjun and Li، نويسنده , , Wenlian and Hong، نويسنده , , Ziruo and Liu، نويسنده , , Xingyuan and Peng، نويسنده , , Junbiao and Liu، نويسنده , , Lin and Liu، نويسنده , , Zhibin and Yu، نويسنده , , Jiaqi and Zhao، نويسنده , , Dongxu and Lee، نويسنده , , Shuit-Tong Lee، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
3
From page
275
To page
277
Abstract
By inserting a thin Gd(AcA) 3phen layer in the electroluminescent devices ITO/Alq/Al and ITO/TPD/Eu(DBM) 3phen/Alq/Al, the quantum efficiency is increased in both devices and the emission color of the second device is changed. These results are supposed to be due to the carrier-blocking effect of the thin Gd(AcA) 3phen layer which changes the distribution of electrons and holes in the devices.
Keywords
Organic devices , electroluminescence , Gd(AcA) 3phen blocking layer
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2071665
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