Title of article :
Porous polyaniline films with high conductivity
Author/Authors :
Li، نويسنده , , Wenguang and Wan، نويسنده , , Meixiang، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1998
Pages :
6
From page :
121
To page :
126
Abstract :
Porous polyaniline (PANI) films with high conductivity at room temperature have been prepared by a new method called ‘doping-dedoping-redoping’. The room-temperature conductivity of the resulting PANI films doped with HCl, HClO4, H2SO4, H3PO4 and p-toluene sulfonic acid (p-TSA), can reach 200–300 S cm−1, which is comparable with the results of PANI films doped with camphor sulfonic acid (CSA) in m-cresol. It has been demonstrated that the resulting PANI chains still keep the expanded conformation like PANI-CSA in m-cresol, which may be why high room-temperature conductivity can be obtained by this new method. Moreover, the electrical and mechanical properties of the resulting PANI films have been measured as a function of the protonation state, temperature and dopants.
Keywords :
Doping , Porous polyaniline
Journal title :
Synthetic Metals
Serial Year :
1998
Journal title :
Synthetic Metals
Record number :
2071714
Link To Document :
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