Title of article
Electrochemical cleavage of a Si–Si bond in poly[(tetraethyldisilanylene)oligo(2,5-thienylene)] films
Author/Authors
Harima، نويسنده , , Y. and Zhu، نويسنده , , L. and Tang، نويسنده , , H. and Yamashita، نويسنده , , K. and Takata، نويسنده , , A. and Ohshita، نويسنده , , J. and Kunai، نويسنده , , A. and Ishikawa، نويسنده , , M.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1998
Pages
3
From page
79
To page
81
Abstract
Electrochemical stability of poly[(tetraethyldisilanylene)oligo(2,5-thienylene)] (DSmT; m refers to the number of thienylene units) films is investigated by means of in situ UV–vis–NIR spectroscopy, in situ and ex situ fluorescence spectroscopy, gel-permeation chromatography, and FT-IR spectroscopy. It is found that a Si–Si bond in DSmT film with m=3 to 5 is cleaved at potentials as low as 0.5 V versus Ag/Ag+ in acetonitrile, resulting in dissolution of oligothiophene-like species. The decomposed products are oxidized to form another polymer film on the surface of an original DSmT film and a doping reaction observed earlier takes place on the composite polymer film.
Keywords
Doping , Bond cleavage , ?–? Conjugation , Polythiophene and derivatives , Organosilicon polymer
Journal title
Synthetic Metals
Serial Year
1998
Journal title
Synthetic Metals
Record number
2071959
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