Author/Authors :
Nishio، نويسنده , , S. and Narisada، نويسنده , , Y. and Kuriki، نويسنده , , Shraddha S. and Matsuzaki، نويسنده , , A. and Sato، نويسنده , , H. and Kinoshita، نويسنده , , H. and Anekawa، نويسنده , , A. and Ando، نويسنده , , N. and Hato، نويسنده , , Y. and Yata، نويسنده , , S. and Tanaka، نويسنده , , K. and Yamabe، نويسنده , , T.، نويسنده ,
Abstract :
Polyacenic semiconductor (PAS) thin films (PAS-F) were prepared onto various substrates at several substrate temperatures (Ts) by excimer laser ablation (ELA) of a bulk phenol-form-aldehyde (PF) resin and/or bulk PAS materials prepared by pyrolysis of the PF resin at several pyrolytic temperatures (Tp) Every PAS-F prepared by ELA was homogeneous dark brown, consisting of fine particles. Remarkable increase of electric conductivities was achieved on increasing Ts during the film formation process for every PAS-F. In particular, the conductivity of the film from PAS with Tp of 935 °C prepared on a substrate at Ts of 300 °C (PASF(935, 300)) reached more than 101Scm−1. Although iodine doping was not possible after film formation process, effective iodine doping during formation process of PAS-F by ELA of PF resin was confirmed. New sharp peaks at 682 and 1906cm−1 related to stretching modes of carbon-iodine and sp carbon-carbon bonds, respectively, are detected in the I2-doped PAS-F.
