Title of article
Effects of pressure on the electrical resistivity of iodine-doped polyacetylene
Author/Authors
Matsushita، نويسنده , , A. and Akagi، نويسنده , , K. and Liang، نويسنده , , T.-S. and Shirakawa، نويسنده , , H.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
2
From page
447
To page
448
Abstract
We have studied the pressure dependence of the resistivity of undoped polyacetylene and iodine-doped one up to 2 GPa. X-ray diffraction measurement under high pressure was carried out for undoped polyacetylene. Anisotropy in compression behavior of structure was observed and was found to correspond with the decrease of electrical resisitivty. Also the influence of pressure transmitting medium on the structure was observed. The semiconducting behavior of iodine-doped polyacetylene was suppressed by pressure but a metallic temperature dependence was not obtained.
Keywords
Conductivity , X-ray diffraction
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2072219
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