Author/Authors :
Matsushita، نويسنده , , A. and Akagi، نويسنده , , K. and Liang، نويسنده , , T.-S. and Shirakawa، نويسنده , , H.، نويسنده ,
Abstract :
We have studied the pressure dependence of the resistivity of undoped polyacetylene and iodine-doped one up to 2 GPa. X-ray diffraction measurement under high pressure was carried out for undoped polyacetylene. Anisotropy in compression behavior of structure was observed and was found to correspond with the decrease of electrical resisitivty. Also the influence of pressure transmitting medium on the structure was observed. The semiconducting behavior of iodine-doped polyacetylene was suppressed by pressure but a metallic temperature dependence was not obtained.
