Title of article :
Mobile charge carriers in pulse-irradiated poly- and oligothiophenes
Author/Authors :
de Haas، نويسنده , , M.P. and van der Laan، نويسنده , , G.P. and Wegewijs، نويسنده , , B. and de Leeuw، نويسنده , , D.M. and Bنuerle، نويسنده , , P. and ، نويسنده , , Rep، نويسنده , , D.B.A and Fichou، نويسنده , , D.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Pages :
2
From page :
524
To page :
525
Abstract :
Lower limits of the intrinsic charge carrier mobility in the solid phase of a series of oligothiophene compounds were determined with the pulse-radiolysis time-resolved microwave conductivity technique, PR-TRMC. The mobility values fall roughly into two regimes and show no correlation with the number of conjugated thiophene units. Relatively low mobilities (in the range of 3–6 10−4 cm2/Vs) were found for a series of cyclohexyl-endcapped thiophenes, while significantly higher values of 0.01–0.02 cm2/Vs were obtained for several n-hexyl and n-dodecyl substituted compounds and for sexithiophene. Interestingly, these latter values are similar to those of n-alkyl substituted polythiophenes measured earlier.
Keywords :
Polythiophene and derivatives , Conductivity
Journal title :
Synthetic Metals
Serial Year :
1999
Journal title :
Synthetic Metals
Record number :
2072259
Link To Document :
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