Author/Authors :
Maud، نويسنده , , J.M. and Herzberg، نويسنده , , D. and Hu، نويسنده , , L. and Salih، نويسنده , , A.J. and Marshall، نويسنده , , J.M.، نويسنده ,
Abstract :
Previous attempts to develop thin film transistors using β,β-disubstituted sexithiophenes have resulted in devices with very low field effect carrier mobilities. In this paper we show that the mobility can be increased significantly if the oligomer is deposited onto a heated substrate.
