Title of article :
Enhanced field effect carrier mobilities in pentacene based thin film transistors via pulsed laser deposition.
Author/Authors :
Maud، نويسنده , , J.M. and Salih، نويسنده , , A.J. and Marshall، نويسنده , , J.M.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Pages :
1
From page :
986
To page :
986
Abstract :
Field effect carrier mobilities in pentacene based thin film transistors are improved considerably when the active layer is deposited via pulsed laser deposition rather than by thermal evaporation. Atomic force microscopy measurements are consistent with improved molecular ordering in the pulsed laser deposited pentacene thin films.
Keywords :
pentacene
Journal title :
Synthetic Metals
Serial Year :
1999
Journal title :
Synthetic Metals
Record number :
2072477
Link To Document :
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