Determination of effects of purity and atmospheric gases on electrical properties of perylene thin films by field effect measurement

We have fabricated thin-film field effect transistors (TFTs) using perylene derivatives (PTCDI, BPPC) and estimated electrical parameters such as carrier mobility, carrier concentration and electrical conductivity by in-situ field effect measurements. It is found that the evaporated perylene thin films show n-type semiconducting properties, and FET characteristics are strongly dependent on the purity of the starting materials, the amount of exposure to oxygen gas, and the thermal annealing.