Author/Authors :
Murgia، نويسنده , , Jacques M. and Michel، نويسنده , , R.H. and Ruani، نويسنده , , G. and Gebauer، نويسنده , , W. and Kapousta، نويسنده , , O. and Zamboni، نويسنده , , R. and Taliani، نويسنده , , C.، نويسنده ,
Abstract :
The in-situ electroluminescence and current voltage characteristics of organic light emitting diode deposited in UHV has been observed. Ultra High Vacuum (UHV) allows to study the system in a clean environment and to monitor in situ the effect of degradation associated with oxidizing agents when those are introduced in the chamber under controlled conditions. Furthermore the changes in the i-v characteristics upon oxygen exposure are reported proving the degradation even at low oxygen partial pressures (<10−8 mbar) as well as changes in depth and distribution of the trap states. The results also confirm the p-doping effect over the whole investigated field range
Keywords :
Light emitting diodes , In-situ analysis , Oxygen effect , p-doping effect , UHV
