Title of article :
Electronic structure of θ-type BETS salts
Author/Authors :
Mori، نويسنده , , H. and Sakurai، نويسنده , , N. and Tanaka، نويسنده , , S. and Moriyama، نويسنده , , H. and Mori، نويسنده , , T. and Kobayashi، نويسنده , , H. and Kobayashi، نويسنده , , A.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Pages :
1
From page :
1882
To page :
1882
Abstract :
A new series of θ-type BETS salts have been prepared and the crystal structure analyses and the electrical resistivity measurements have been carried out. θ-BETS2MM′(SCN)4 [MM′=RbCo, RbZn, CsCo, CsZn]are isostructural to ET analogues. The metal insulator transition occurs at 25 Kfor θ-RbM′, whereas the metallic behaviors down to 2K have been observed for θ-CsM′ and θBETS 2Ag(CN)2. The phase diagram of θ-type BETS salts shows that the electronic state is scaled by electronic correlation parameter (U/W), and that the metallic state extends wider, compared with θ-ET salts.
Keywords :
Electrocrystallization , Transport measurementיs , Metal-insulator phase transitions , Organic conductors based upon cation and/or anion radical salts
Journal title :
Synthetic Metals
Serial Year :
1999
Journal title :
Synthetic Metals
Record number :
2072911
Link To Document :
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