Title of article :
Low-Temperature Electronic States in θ-(BEDT-TTF)2RbZn(SCN)4: Competition of Different Ground States
Author/Authors :
Nakamura، نويسنده , , T. and Minagawa، نويسنده , , W. and Kinami، نويسنده , , R. and Konishi، نويسنده , , Y. and Takahashi، نويسنده , , T.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Abstract :
Magnetic properties of θ-(ET)2RbZn(SCN)4 were studied. The low temperature electronic state was found to depend on the sample cooling speed around 190 K and on the chemical doping. To clarify the electronic states of the low-temperature nonmetallic phase and the mechanism of the M-I transition, we performed SQUID, EPR, 1H- and 13C-NMR measurements.
Keywords :
electron spin resonance , Organic conductors based on radical cation and/or anion salts , nuclear magnetic resonance spectroscopy , Magnetic phase transitions , Metal-insulator phase transitions
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
