Field effect transistor using poly(o-metoxyaniline) films

A thin-film transistor (TFT) with good carrier mobility and environmental stability has been fabricated using poly(o-metoxyaniline) (POMA) as the active layer. The carrier mobility has been determined to be approximately 2×10−4 cm2 V−1 s−1, for the best transistors with low conductivity (<10−7 Ω−1 cm−1). High dynamic ranges have been found, with source–drain currents varying four orders of magnitude with different gate voltages.