Title of article
Time-of-flight measurements in thin films of regioregular poly(3-hexyl thiophene)
Author/Authors
Juska، نويسنده , , G. and Arlauskas، نويسنده , , K. and ضsterbacka، نويسنده , , R. and Stubb، نويسنده , , H.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2000
Pages
4
From page
173
To page
176
Abstract
We have studied the transport of holes in thin films of regioregular poly(3-hexyl thiophene) (RRPHT). In comparison to regiorandom poly(3-hexyl thiophene) (PHT), RRPHT is a promising material for electronic devices, due to the high field effect mobility observed. We have studied the photogenerated charge carrier transport by using the integral time-of-flight (TOF) method. We have also studied the transport properties of the equilibrium charge carriers by a newly developed method of equilibrium charge carrier extraction in the case of a linearly increasing voltage. From TOF measurements in the subnanosecond time scale, it was experimentally obtained that the drift distance of holes is smaller than the inter-electrode distance in both PHT and RRPHT films and the mobility is higher than 10−2 cm2/Vs. In the millisecond time scale we obtained additional low mobility of equilibrium holes in RRPHT.
Keywords
Regioregular poly(3-hexylthiophene) , Mobility , Conductivity
Journal title
Synthetic Metals
Serial Year
2000
Journal title
Synthetic Metals
Record number
2073511
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