Author/Authors :
Stallinga، نويسنده , , P and Gomes، نويسنده , , H.L and Rost، نويسنده , , H and Holmes، نويسنده , , A.B and Harrison، نويسنده , , M.G and Friend، نويسنده , , R.H، نويسنده ,
Abstract :
pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states.
Keywords :
Polymers , traps , DLTS , MEH-PPV
