Title of article
Electronic levels in MEH-PPV
Author/Authors
Stallinga، نويسنده , , P and Gomes، نويسنده , , H.L and Rost، نويسنده , , H and Holmes، نويسنده , , A.B and Harrison، نويسنده , , M.G and Friend، نويسنده , , R.H، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2000
Pages
3
From page
535
To page
537
Abstract
pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states.
Keywords
Polymers , traps , DLTS , MEH-PPV
Journal title
Synthetic Metals
Serial Year
2000
Journal title
Synthetic Metals
Record number
2073701
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