Photoelectrical behaviour of Schottky junctions between poly(4H-cyclopenta[2,1-b:3,4-b′]dithiophene) and aluminium: influence of the temperature of electrosynthesis

The photoelectrical behaviour of Schottky junctions between poly(4H-cyclopenta[2,1-b:3,4-b′]dithiophene) (poly(CPDT)) and aluminium, with the polymer electrosynthesised both at ambient and low (−24°C) temperature, was compared. Higher photocurrent and photosensitivity values were obtained for the system based on the polymer prepared at low temperature. An improvement of the structural order and of carrier mobility for the polymer synthesised at −24°C was hypothesised.