Title of article :
Photoluminescence and electroluminescence of vacuum-deposited poly(p-phenylene) thin film
Author/Authors :
Lee، نويسنده , , C.H. and Kang، نويسنده , , G.W. and Jeon، نويسنده , , J.W. and Song، نويسنده , , W.J. and Kim، نويسنده , , S.Y. and Seoul، نويسنده , , C.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2001
Pages :
5
From page :
75
To page :
79
Abstract :
We have studied the photoluminescence (PL) and electroluminescence (EL) properties of vacuum-deposited poly(p-phenylene) (PPP) thin film. The film shows the blue PL and EL emission at about 450 nm with well-resolved vibronic structures. The current–voltage–light (I–V–L) characteristics are systematically studied in the temperature range between 12 and 300 K in light-emitting devices of ITO/PPP/Al, and the devices with a hole transporting layer of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-[1,1′-biphenyl]-4,4′-diamine (TPD), ITO/TPD/PPP/Al. The I–V dependence appears to follow the power law, I∝Vm+1, characteristics of a space-charge-limited current. The EL quantum efficiency increases with the decreasing temperature in ITO/TPD/PPP/Al. From the time delay between the EL emission and the onset of the bias voltage pulse in ITO/PPP/Al, we estimated the hole mobility of ∼4×10−6 cm2/V s in the vacuum-deposited PPP film.
Keywords :
light-emitting diodes , Poly(p-phenylene) , electroluminescence , Photoluminescence
Journal title :
Synthetic Metals
Serial Year :
2001
Journal title :
Synthetic Metals
Record number :
2073997
Link To Document :
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