Title of article :
Non-ohmic current–voltage characteristics in single-wall carbon nanotube network
Author/Authors :
Kim، نويسنده , , G.T. and Jhang، نويسنده , , S.H and Park، نويسنده , , J.G. and Park، نويسنده , , Y.W. and Roth، نويسنده , , S.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2001
Abstract :
The non-ohmic current–voltage (I–V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T=1.4–300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I–V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.
Keywords :
Fullerenes and related materials , Localization effect (Anderson or weak localization) , High-field and non-linear effect
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals