Title of article
The hillock formation on the basal planes of graphite due to ion interaction
Author/Authors
Bourelle، نويسنده , , E and Inagaki، نويسنده , , M and Kaburagi، نويسنده , , Y and Tanabe، نويسنده , , Y and Hishiyama، نويسنده , , Y and Yasuda، نويسنده , , E and Kimura، نويسنده , , S، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2001
Pages
10
From page
239
To page
248
Abstract
Highly oriented graphite materials were modified by the introduction of foreign species, i.e. doped by iron and implanted by energetic ions. On irradiated surfaces, hillocks were observed and assessed using STM. An increase in atomic weight of the implant
Keywords
Scanning tunnelling microscopy , graphite and related compounds , Surface defects , Ion implantation
Journal title
Synthetic Metals
Serial Year
2001
Journal title
Synthetic Metals
Record number
2075768
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