Title of article :
Uniaxial strain dependence of electronic states of θ-(BEDT-TTF)2MZn(SCN)4 [M=Cs,Rb]
Author/Authors :
Iwashita، نويسنده , , K. and Yamamoto، نويسنده , , H.M. and Yoshino، نويسنده , , H. and Graf، نويسنده , , Steven D. and Storr، نويسنده , , K. and Rutel، نويسنده , , I. and Brooks، نويسنده , , J.S. and Takahashi، نويسنده , , T. and Murata، نويسنده , , Keizo، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2003
Pages :
3
From page :
153
To page :
155
Abstract :
We studied the electronic states of θ-(BEDT-TTF)2MZn(SCN)4 [M=Cs,Rb] under uniaxial strain//a (a-strain), which is expected to suppress the M–I transition and to appear the superconductivity (SC). From the temperature dependence of the resistivity, the M–I transition is suppressed as expected. However, even at 12 kbar, the SC is not observed down to 1.2 K and the resistivity increases as log T below about 5 K. In the temperature region where the resistivity increases as log T with decreasing T, the negative magnetoresistance (N-MR) was observed. We speculate that the origin of N-MR is weak localization (WL), from angular dependence of magnetoresistance (ADMR). We propose the WL is associated with charge disproportionation (CDP).
Keywords :
Uniaxial strain , magnetoresistance , Weak localization , Charge disproportionation
Journal title :
Synthetic Metals
Serial Year :
2003
Journal title :
Synthetic Metals
Record number :
2077052
Link To Document :
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