Title of article :
Hot wall epitaxial growth of highly ordered organic epilayers
Author/Authors :
Sitter، نويسنده , , H. and Andreev، نويسنده , , A. and Matt، نويسنده , , G. and Sariciftci، نويسنده , , N.S.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2003
Abstract :
Hot wall epitaxy works close to thermodynamic equilibrium and is therefore most applicable for materials with Van der Waals binding character. The hot wall epitaxy system can be described as semiclosed growth reactor, consisting of a vertically mounted qu
Keywords :
Crystalline C60 films , Doping , Hot wall epitaxy , Mobility
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
