Title of article
Hot wall epitaxial growth of highly ordered organic epilayers
Author/Authors
Sitter، نويسنده , , H. and Andreev، نويسنده , , A. and Matt، نويسنده , , G. and Sariciftci، نويسنده , , N.S.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
5
From page
9
To page
13
Abstract
Hot wall epitaxy works close to thermodynamic equilibrium and is therefore most applicable for materials with Van der Waals binding character. The hot wall epitaxy system can be described as semiclosed growth reactor, consisting of a vertically mounted qu
Keywords
Crystalline C60 films , Doping , Hot wall epitaxy , Mobility
Journal title
Synthetic Metals
Serial Year
2003
Journal title
Synthetic Metals
Record number
2078656
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