Title of article :
Tunnel current in organic field-effect transistors
Author/Authors :
Horowitz، نويسنده , , Gilles، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2003
Abstract :
Several recent papers on field-effect transistors made of vapor deposited organic semiconductors reported that charge carrier mobility might become temperature independent at low temperature. To account for this behavior, we develop a model based on the p
Keywords :
Polycrystalline films , Tunneling , organic semiconductors , Field-effect mobility
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
