Author/Authors :
Checcoli، نويسنده , , P. and Conte، نويسنده , , G. and Salvatori، نويسنده , , S. and Paolesse، نويسنده , , R. and Bolognesi، نويسنده , , A. and Berliocchi، نويسنده , , M. and Brunetti، نويسنده , , F. and Amico، نويسنده , , A. and Di Carlo، نويسنده , , A. and Lugli، نويسنده , , P.، نويسنده ,
Abstract :
Long channel p-type field effect transistors were realized by using 5,10,15,20-tetra-phenyl porphyrin. The organic was deposited by spray coating from a chloroform solution onto thermally oxidized silicon substrates where chromium source and drain contact
Keywords :
Leakage currents , molecular electronics , Porphyrins , Organic thin film transistor
