Title of article
The influence of bulk traps on the subthreshold characteristics of an organic field effect transistor
Author/Authors
Scheinert، نويسنده , , S. and Paasch، نويسنده , , G. and Doll، نويسنده , , T.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
5
From page
233
To page
237
Abstract
The subthreshold characteristics of fabricated organic field effect transistors based on regioregular poly(3-dodecylthiophene) (P3DDT) as the active layer and poly-4-vinylphenol (P4VP) as the gate insulator have been investigated. The transistor turn-on o
Keywords
conjugated polymer , Deep trap , Organic field effect transistor
Journal title
Synthetic Metals
Serial Year
2003
Journal title
Synthetic Metals
Record number
2079206
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