Title of article :
Polythiophene-based field-effect transistors with enhanced air stability
Author/Authors :
Ong، نويسنده , , Beng and Wu، نويسنده , , Yiliang and Jiang، نويسنده , , Lu and Liu، نويسنده , , Ping and Murti، نويسنده , , Krish، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Abstract :
We have demonstrated that relatively air stable field-effect transistors (TFTs) with mobility up to 0.01 cm2/V s, near-zero turn-on voltage, and current on/off ratio over 105 could be fabricated in entirety under ambient conditions with poly(3′,4′-dialkyl
Keywords :
Organic thin-film transistor , Polythiophene , Field-effect mobility , Current on/off ratio
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
