Title of article
Photoimpedance spectroscopy of poly(3-hexyl thiophene) metal–insulator–semiconductor diodes
Author/Authors
Meijer، نويسنده , , E.J. and Mangnus، نويسنده , , A.V.G. and Huisman، نويسنده , , B.-H. and ‘t Hooft، نويسنده , , G.W. and de Leeuw، نويسنده , , D.M. and Klapwijk، نويسنده , , T.M.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
4
From page
53
To page
56
Abstract
Capacitance–voltage (C–V) characteristics of metal–insulator–semiconductor (MIS) diodes with poly(3-hexylthiophene) (P3HT) as p-type semiconductor were investigated as function of time, ambient, and illumination. P3HT is only stable under illumination wit
Keywords
Photoimpedance spectroscopy , Poly(3-hexyl thiophene) , Diodes
Journal title
Synthetic Metals
Serial Year
2004
Journal title
Synthetic Metals
Record number
2080092
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