Title of article :
Fabrication of regioregular poly(3-hexylthiophene) field-effect transistors by dip-coating
Author/Authors :
Wang، نويسنده , , Guangming and Hirasa، نويسنده , , Takashi and Moses، نويسنده , , Daniel and Heeger، نويسنده , , Alan J.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2004
Pages :
6
From page :
127
To page :
132
Abstract :
We report the influence of dip-coating speed and concentration of the polymer solution on the characteristics of field-effect transistors (FETs) fabricated in the bottom-contact structure with regioregular poly(3-hexylthiophene) (RR-P3HT) as the active se
Keywords :
Field-effect transistors (FETs) , dip-coating , Regioregular poly(3-hexylthiophene) (RR-P3HT) , AFM Images
Journal title :
Synthetic Metals
Serial Year :
2004
Journal title :
Synthetic Metals
Record number :
2080783
Link To Document :
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